Wavelength(m)	n	k
# material: Si
# source: D. E. Aspnes and A. A. Studna. Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV. Phys. Rev. B 27, 985-1009 (1983)
# conditions: Crystal orientation: ; Doping: 2.3x1014 cm-3, n; Room temperature
# upstream: polyanskiy/refractiveindex.info-database@ff11b58 main/Si/nk/Aspnes.yml
# type: tabulated nk
# range: 2.0660e-07 - 8.2660e-07 m
# converted: 2026-07-31 (wavelength um -> m)
2.066000e-07	1.01	2.909
2.101000e-07	1.083	2.982
2.138000e-07	1.133	3.045
2.175000e-07	1.186	3.12
2.214000e-07	1.247	3.206
2.254000e-07	1.34	3.302
2.296000e-07	1.471	3.366
2.339000e-07	1.579	3.353
2.384000e-07	1.589	3.354
2.431000e-07	1.571	3.429
2.480000e-07	1.57	3.565
2.530000e-07	1.597	3.749
2.583000e-07	1.658	3.979
2.638000e-07	1.764	4.278
2.695000e-07	1.988	4.678
2.755000e-07	2.452	5.082
2.818000e-07	3.12	5.344
2.883000e-07	4.087	5.395
2.952000e-07	4.888	4.639
3.024000e-07	5.02	3.979
3.100000e-07	5.01	3.586
3.179000e-07	5.016	3.346
3.263000e-07	5.065	3.182
3.351000e-07	5.156	3.058
3.444000e-07	5.296	2.987
3.542000e-07	5.61	3.014
3.647000e-07	6.522	2.705
3.757000e-07	6.709	1.32
3.875000e-07	6.062	0.63
3.999000e-07	5.57	0.387
4.133000e-07	5.222	0.269
4.275000e-07	4.961	0.203
4.428000e-07	4.753	0.163
4.592000e-07	4.583	0.13
4.769000e-07	4.442	0.09
4.959000e-07	4.32	0.073
5.166000e-07	4.215	0.06
5.391000e-07	4.123	0.048
5.636000e-07	4.042	0.032
5.904000e-07	3.969	0.03
6.199000e-07	3.906	0.022
6.525000e-07	3.847	0.016
6.888000e-07	3.796	0.013
7.293000e-07	3.752	0.01
7.749000e-07	3.714	0.008
8.266000e-07	3.673	0.005
